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MCR16N
Preferred Device
Silicon Controlled Rectifiers
Reverse Blocking Thyristors
Designed primarily for half-wave ac control applications, such as motor controls, heating controls, and power supplies; or wherever half-wave, silicon gate-controlled devices are needed.
Features
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* * * * * * * *
Blocking Voltage to 800 Volts On-State Current Rating of 16 Amperes RMS High Surge Current Capability - 160 Amperes Rugged Economical TO-220AB Package Glass Passivated Junctions for Reliability and Uniformity Minimum and Maximum Values of IGT, VGT, and IH Specified for Ease of Design High Immunity to dv/dt - 100 V/msec Minimum at 125C Pb-Free Package is Available*
SCRs 16 AMPERES RMS 800 VOLTS
G A K
MARKING DIAGRAM
MAXIMUM RATINGS (TJ = 25C unless otherwise noted)
Rating Peak Repetitive Off-State Voltage (Note 1) (TJ = -40 to 125C, Sine Wave, 50 to 60 Hz, Gate Open) MCR16N On-State RMS Current (180 Conduction Angles; TC = 80C) Peak Non-repetitive Surge Current (1/2 Cycle, Sine Wave 60 Hz, TJ = 125C) Circuit Fusing Consideration (t = 8.3 ms) Forward Peak Gate Power (Pulse Width 1.0 ms, TC = 80C) Forward Average Gate Power (t = 8.3 ms, TC = 80C) Forward Peak Gate Current (Pulse Width 1.0 ms, TC = 80C) Operating Junction Temperature Range Storage Temperature Range Symbol VDRM, VRRM 800 IT(RMS) ITSM I2t PGM PG(AV) IGM TJ Tstg 16 160 106 5.0 0.5 2.0 -40 to +125 -40 to +150 A A A2sec W W A C C 1 2 3 4 A Y WW G AKA = Assembly Location = Year = Work Week = Pb-Free Package = Diode Polarity 1 2 TO-220AB CASE 221A-09 STYLE 3 Value Unit V AY WW MCR16NG AKA
3
PIN ASSIGNMENT
Cathode Anode Gate Anode
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.
ORDERING INFORMATION
Device MCR16N MCR16NG Package TO-220AB TO-220AB (Pb-Free) Shipping 50 Units / Rail 50 Units / Rail
*For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
(c) Semiconductor Components Industries, LLC, 2005
Preferred devices are recommended choices for future use and best overall value.
1
December, 2005 - Rev. 4
Publication Order Number: MCR16/D
MCR16N
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction-to-Case Junction-to-Ambient Symbol RqJC RqJA TL Value 1.5 62.5 260 Unit C/W C
Maximum Lead Temperature for Soldering Purposes 1/8 from Case for 10 Seconds
ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted)
Characteristic OFF CHARACTERISTICS Peak Repetitive Forward or Reverse Blocking Current (VAK = Rated VDRM or VRRM, Gate Open) ON CHARACTERISTICS Peak Forward On-State Voltage (Note 2) (ITM = 32 A) Gate Trigger Current (Continuous dc) (VD = 12 V, RL = 100 W) Gate Trigger Voltage (Continuous dc) (VD = 12 V, RL = 100 W) Hold Current (Anode Voltage = 12 V, Initiating Current = 200 mA, Gate Open) Latch Current (VD = 12 V, Ig = 200 mA) DYNAMIC CHARACTERISTICS Critical Rate of Rise of Off-State Voltage (VD = Rated VDRM, Exponential Waveform, Gate Open, TJ = 125C) Critical Rate of Rise of On-State Current (IPK = 50 A, Pw = 30 ms, diG/dt = 1 A/msec, Igt = 50 mA) 2. Indicates Pulse Test: Pulse Width v 2.0 ms, Duty Cycle v 2%. dv/dt di/dt 100 - 300 - - 50 V/ms A/ms VTM IGT VGT IH IL - 2.0 0.5 4.0 - - 10 0.65 25 30 1.7 20 1.0 40 60 V mA V mA mA TJ = 25C TJ = 125C IDRM, IRRM - - - - 0.01 2.0 mA Symbol Min Typ Max Unit
Voltage Current Characteristic of SCR
+ Current Anode + VTM on state IRRM at VRRM IH
Symbol
VDRM IDRM VRRM IRRM VTM IH
Parameter
Peak Repetitive Off State Forward Voltage Peak Forward Blocking Current Peak Repetitive Off State Reverse Voltage Peak Reverse Blocking Current Peak On State Voltage Holding Current Reverse Blocking Region (off state) Reverse Avalanche Region Anode -
+ Voltage IDRM at VDRM Forward Blocking Region (off state)
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MCR16N
130 TC, CASE TEMPERATURE ( C) 120 = CONDUCTION ANGLE 110 P(AV), AVERAGE POWER DISSIPATION (WATTS) 32 180 60 90 dc
24
= CONDUCTION ANGLE = 30
16
100
90 80 0 2 4 = 30 6 60 8 90 10 180 12 14
8
dc
0 0 2 4 6 8 10 12 14 16 IT(AV), AVERAGE ON-STATE CURRENT (AMPS)
16
IT(RMS), ITRMS ON-STATE CURRENT (AMPS)
Figure 1. Typical RMS Current Derating
Figure 2. On State Power Dissipation
Typical @ TJ = 25C
R(t) TRANSIENT THERMAL R (NORMALIZED)
100
1
Maximum @ TJ = 125C
ZqJC(t) = RqJC(t) r(t) 0.1
I T , INSTANTANEOUS ON-STATE CURRENT (AMPS)
10
0.01
0.1
1
10
100
1000
1104
Maximum @ TJ = 25C
t, TIME (ms)
Figure 4. Transient Thermal Response
100 IH, HOLDING CURRENT (mA) 1
10
0.1 0.5 1.3 1.7 2.1 0.9 VT, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS) 2.5
1 -40 -25 -10 5 20 35 50 65 80 95 110 125 TJ, JUNCTION TEMPERATURE (C)
Figure 3. Typical On-State Characteristics
Figure 5. Typical Holding Current versus Junction Temperature
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MCR16N
100 GATE TRIGGER CURRENT (mA) -40 -25 -10 5 20 35 50 65 80 95 110 125 IL , LATCHING CURRENT (mA) 30 25 20 15 10 5 0 -40 -25 -10 5 20 35 50 65 80 95 110 125 TJ, JUNCTION TEMPERATURE (C) TJ, JUNCTION TEMPERATURE (C)
10
1
Figure 6. Typical Latching Current versus Junction Temperature
Figure 7. Typical Gate Trigger Current versus Junction Temperature
1.0 V GT, GATE TRIGGER VOLTAGE (VOLTS) 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 -40 -25 -10 5 20 35 50 65 80 95 110 125 TJ, JUNCTION TEMPERATURE (C) I TSM , PEAK SURGE CURRENT (AMP)
160 1 Cycle 150 140 130 120 110 TJ = 125C f = 60 Hz 100 90 1 2 3 4 5 6 7 8 9 10
NUMBER OF CYCLES
Figure 8. Typical Gate Trigger Voltage versus Junction Temperature
Figure 9. Maximum Non-Repetitive Surge Current
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MCR16N
PACKAGE DIMENSIONS
TO-220AB CASE 221A-09 ISSUE AA
-T- B
4
SEATING PLANE
F T S
C
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. DIM A B C D F G H J K L N Q R S T U V Z INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 --- --- 0.080 CATHODE ANODE GATE ANODE MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 --- --- 2.04
Q
123
A U K
H Z L V G D N R J
STYLE 3: PIN 1. 2. 3. 4.
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
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MCR16/D

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